Problem 61073. Compute MOSFET oxide thickness
Calculate the oxide thickness
in nanometers for an NMOS on a p-type substrate.
Inputs (all scalars):
- NA — acceptor concentration, cm^-3 (e.g., 2e15)
- VT — threshold voltage, V (e.g., 1)
- Phi_ms — metal–semiconductor work-function difference, V (e.g., -0.3)
- epsr_ox — oxide relative permittivity (e.g., 4)
- epsr_s — semiconductor relative permittivity (e.g., 11.7)
Use these constants (room temperature):
- ni = 1e10 cm^-3
- T = 300 K
- kT/q = 0.02585 V
- eps0 = 8.85e-14 F/cm
- q = 1.6e-19 C
Return the thickness in nm.
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